M30620FCAFP datasheet(226/274 Pages) MITSUBISHI

226 / 274 page

CPU Rewrite Mode (Flash Memory Version)

Mitsubishi microcomputers

M16C / 62A Group

SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

226

Write 2016

Write D016

Block address

Check full status

check(Note)

Block erase

completed

Start

RY/BY status flag

= 1?

YES

Error

Erase error

Note: Refer to Figure 1.26.8.

Figure 1.26.5. Block erase flowchart

Block Erase Command (2016/D016)

By writing the command code “2016” in the first bus cycle and the confirmation command code “D016”

in the second bus cycle that follows to the block address of a flash memory block, the system initiates

an auto erase (erase and erase verify) operation.

Whether the auto erase operation is completed can be confirmed by reading the status register or the

flash memory control register 0. At the same time the auto erase operation starts, the read status

status register bit 7 (SR7) is set to 0 at the same time the auto erase operation starts and is returned

to 1 upon completion of the auto erase operation. In this case, the read status register mode remains

active until the Read Array command (FF16) or Read Lock Bit Status command (7116) is written or the

flash memory is reset using its reset bit.

____

The RY/BY status flag of the flash memory control register 0 is 0 during auto erase operation and 1

when the auto erase operation is completed as is the status register bit 7.

After the auto erase operation is completed, the status register can be read out to know the result of

the auto erase operation. For details, refer to the section where the status register is detailed.

Figure 1.26.5 shows an example of a block erase flowchart.

Each block of the flash memory can be protected against erasure by using a lock bit. For details, refer

to the section where the data protect function is detailed.

M30620FCAFP Datasheet(PDF) 226 Page - Mitsubishi Electric Semiconductor