S9018-SOT23 datasheet(1/3 Pages) YFWDIODE

Part #	S9018-SOT23

Description	NPN Transistors

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Manufacturer	YFWDIODE [DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD]

Direct Link	http://www.yfwdiode.com/

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Features

High current gain bandwidth product.

power dissipation.(PC=200mW)

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

VCBO

30

V

Collector to Emitter Voltage

VCEO

15

V

Emitter to Base Voltage

VEBO

5

V

Collector Current to Continuous

IC

50

mA

Collector Power Dissipation

PC

200

mW

Junction Temperature

Tj

150

Storage Temperature

Tstg

-55 to 150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditions

Min

Typ

Max

Unit

Collector to base breakdown voltage

IC= 100 uA, IE=0

30

V

Collector to emitter breakdown voltage

IC= 1mA, IB=0

15

V

Emitter to base breakdown voltage

IE=100 uA, IC=0

5

V

Collector cut to off current

ICBO

VCB=12V, IE=0

0.05

uA

Emitter cut to off current

IEBO

VEB= 3V, IC=0

0.1

uA

DC current gain

hFE

VCE=5V, IC= 1mA

70

190

Collector to emitter saturation voltage

VCE(sat) IC=10mA, IB= 1mA

0.5

V

Base to emitter saturation voltage

VBE(sat) IC=10mA, IB= 1mA

1.4

V

Transition frequency

fT

VCE=5V, IC= 5mA,f=400MHz

600

MHz

V(BR)CBO

V(BR)CEO

V(BR)EBO

■

Features

●

■

℃

■

Classification of hfe

Type

S9018-L

S9018-H

Range

70-105

105-190

Marking

J8

S9018

NPN Transistors

1

2

3

1.Base

2.Emitter

3.Collector

■

Simplified outline(SOT-23)

www.yfwdiode.com

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S9018-SOT23 Datasheet(PDF) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

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