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RJF0411JPD Datasheet(PDF) 2 Page - Renesas Technology Corp |
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RJF0411JPD Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 8 page ![]() RJF0411JPD R07DS1258EJ0100 Rev.1.00 Page 2 of 7 Jun 23, 2015 Typical Operation Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Input voltage VIH 3.5 — — V VIL — — 1.2 V Input current (Gate non shut down) IIH1 — — 100 A Vi = 8 V, VDS = 0 IIH2 — — 50 A Vi = 3.5 V, VDS = 0 IIL — — 1 A Vi = 1.2 V, VDS = 0 Input current (Gate shut down) IIH(sd)1 — 0.8 — mA Vi = 8 V, VDS = 0 IIH(sd)2 — 0.35 — mA Vi = 3.5 V, VDS = 0 Shut down temperature Tsd — 175 — C Channel temperature Gate operation voltage Vop 3.5 — 12 V Drain current (Current limitation value) ID limt 34 — — A VGS = 5 V, VDS = 10 V Note 4 Tc ≤ 80 C Note: 4. Pulse test Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain current ID1 — — 40 A VGS = 3.5 V, VDS = 10 V Note 5 ID2 — — 10 mA VGS = 1.2 V, VDS = 10 V ID3 34 — — A VGS = 5 V, VDS = 10 V Note 5 Tc ≤ 80 C ID4 34 — — A VGS = 4.5 V, VDS = 10 V Note 5 Tc ≤ 80 C Drain to source breakdown voltage V(BR)DSS 40 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 16 — — V IG = 800 A, VDS = 0 V(BR)GSS –2.5 — — V IG = –100 A, VDS = 0 Gate to source leak current IGSS1 — — 100 A VGS = 8 V, VDS = 0 IGSS2 — — 50 A VGS = 3.5 V, VDS = 0 IGSS3 — — 1 A VGS = 1.2 V, VDS = 0 IGSS4 — — –100 A VGS = –2.4 V, VDS = 0 Input current (shut down) IGS(OP)1 — 0.8 — mA VGS = 8 V, VDS = 0 IGS(OP)2 — 0.35 — mA VGS = 3.5 V, VDS = 0 Zero gate voltage drain current IDSS — — 10 A VDS = 32 V, VGS = 0, Tc = 110 C Gate to source cutoff voltage VGS(off) 1.1 — 2.1 V VDS = 10 V, ID = 1 mA Forward transfer admittance |yfs| 12 21.9 — S ID = 15 A, VDS = 10 V Note 5 Static drain to source on state resistance RDS(on) — 29.9 43 m ID = 15 A, VGS = 5 V Note 5 RDS(on) — 23.8 37 m ID = 15 A, VGS = 10 V Note 5 Output capacitance Coss — 416 — pF VDS = 10 V, VGS = 0, f = 1MHz Turn-on delay time td(on) — 3 — s VGS = 10 V, ID= 15 A, RL = 2 Rise time tr — 12.8 — s Turn-off delay time td(off) — 4 — s Fall time tf — 9.9 — s Body-drain diode forward voltage VDF — 0.96 — V IF = 30 A, VGS = 0 Body-drain diode reverse recovery time trr — 109 — ns IF = 30 A, VGS = 0 diF/dt = 50 A/ s Over load shut down operation time Note 6 tos1 — 0.26 — ms VGS = 5 V, VDD = 16 V Notes: 5. Pulse test 6. Including the junction temperature rise of the over loaded condition. |
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