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RJF0411JPD Datasheet(PDF) 5 Page - Renesas Technology Corp |
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RJF0411JPD Datasheet(HTML) 5 Page - Renesas Technology Corp |
5 / 8 page ![]() RJF0411JPD R07DS1258EJ0100 Rev.1.00 Page 5 of 7 Jun 23, 2015 200 180 160 140 120 0 Gate to Source Voltage VGS (V) 100 2468 10 ID = 0.5 A Shutdown Case Temperature vs. Gate to Source Voltage 3 1 0.3 0.1 0.03 0.01 10 μ 100 μ 1 m 10 m 100 m 1 10 DM P PW T D = PW T θch - c(t) = γs (t) θch - c θch - c = 3.125°C / W, Tc = 25°C Tc = 25°C D = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse Pulse Width PW (s) Normalized Transient Thermal Impedance vs. Pulse Width 10 8 4 2 6 0 Gate to Source Voltage vs. Shutdown Time of Load-Short Test 0.1 1 Shutdown Time of Load-Short Test PW (ms) VDD = 16 V |
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