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RJF0411JPD Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # RJF0411JPD
Description  40V, 34A Silicon N Channel Thermal FET Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJF0411JPD Datasheet(HTML) 4 Page - Renesas Technology Corp

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RJF0411JPD
R07DS1258EJ0100 Rev.1.00
Page 4 of 7
Jun 23, 2015
70
60
50
–50 –25
0
25
75 100
50
150
125
Case Temperature
Tc (°C)
0
20
40
10
30
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
Reverse Drain Current
IDR (A)
Body-Drain Diode Reverse
Recovery Time
1
10
100
1000
10
100
1
010
20
30
40
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
300
100
30
10
20
25
30
0
Source to Drain Voltage VSD (V)
0
5
10
15
Reverse Drain Current vs.
Source to Drain Voltage
0.4
0.8
1.2
1.6
2.0
100
10
1
1
10
100
0.1
Drain Current
ID (A)
Switching Characteristics
0 V
VGS = 10 V, VDD = 30 V
PW = 300
μs, duty ≤ 1 %
diF / dt = 50 A /
μs
VGS = 0, Ta = 25°C
VGS = 5 V
10 V
ID = 15 A
5 A, 10 A
ID = 5 A, 10 A, 15 A
tf
tr
td(off)
td(on)
Coss
VGS = 0
f = 1 MHz
100
10
1
0.1
0.1
1
100
10
25°C
VDS = 10 V
Pulse Test
Tc = – 40°C
VGS = 5 V
Pulse Test
Pulse Test


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