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RJF0411JPD Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RJF0411JPD Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page ![]() RJF0411JPD R07DS1258EJ0100 Rev.1.00 Page 4 of 7 Jun 23, 2015 70 60 50 –50 –25 0 25 75 100 50 150 125 Case Temperature Tc (°C) 0 20 40 10 30 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Drain Current ID (A) Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time 1 10 100 1000 10 100 1 010 20 30 40 Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage 10000 3000 1000 300 100 30 10 20 25 30 0 Source to Drain Voltage VSD (V) 0 5 10 15 Reverse Drain Current vs. Source to Drain Voltage 0.4 0.8 1.2 1.6 2.0 100 10 1 1 10 100 0.1 Drain Current ID (A) Switching Characteristics 0 V VGS = 10 V, VDD = 30 V PW = 300 μs, duty ≤ 1 % diF / dt = 50 A / μs VGS = 0, Ta = 25°C VGS = 5 V 10 V ID = 15 A 5 A, 10 A ID = 5 A, 10 A, 15 A tf tr td(off) td(on) Coss VGS = 0 f = 1 MHz 100 10 1 0.1 0.1 1 100 10 25°C VDS = 10 V Pulse Test Tc = – 40°C VGS = 5 V Pulse Test Pulse Test |
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