MMBTA42-SOT23 datasheet(1/3 Pages) YFWDIODE

Part #	MMBTA42-SOT23

Description	NPN Transistors

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Manufacturer	YFWDIODE [DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD]

Direct Link	http://www.yfwdiode.com/

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■

Features

●

High breakdown voltage

●

Low collector-emitter saturation voltage

●

Complementary to MMBTA92 (PNP)

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

300

Collector - Emitter Voltage

VCEO

300

Emitter - Base Voltage

VEBO

5

Collector Current - Continuous

IC

500

mA

Collector Power Dissipation

PC

350

mW

Thermal Resistance Junction to Ambient

RθJA

357

℃

/W

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-55 to 150

V

℃

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

Ic= 100 μA， IE= 0

300

Collector- emitter breakdown voltage

VCEO

Ic= 1 mA， IB= 0

300

Emitter - base breakdown voltage

VEBO

IE= 100 uA， IC= 0

5

Collector-base cut-off current

ICBO

VCB= 200 V , IE= 0

0.1

Emitter cut-off current

IEBO

VEB= 5V , IC=0

0.1

Collector-emitter saturation voltage

VCE(sat) IC= 20 mA, IB= 2mA

0.2

Base - emitter saturation voltage

VBE(sat) IC= 20mA, IB= 2mA

0.9

hfe（1） VCE= 10V, IC= 1mA

60

hfe（2） VCE= 10V, IC= 10mA

100

hfe（3） VCE= 10V, IC= 30mA

60

Transition frequency

fT

VCE= 20V, IC= 10mA, f=30MHz

50

MHz

DC current gain

V

uA

300

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Classification of hfe(2)

Type

MMBTA42

MMBTA42-L

Range

100-300

100-200

Marking

1D

MMBTA42

NPN Transistors

1

2

3

1.Base

2.Emitter

3.Collector

■

Simplified outline(SOT-23)

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MMBTA42-SOT23 Datasheet(PDF) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

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