QCA200A60 datasheet(1/2 Pages) SANREX

Part #	QCA200A60

Description	TRANSISTOR MODULE

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Manufacturer	SANREX [SanRex Corporation]

Direct Link	http://www.sanrex.com

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SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com

QCA200A40/60

TRANSISTOR MODULE

UL;E76102

（M）

■Maximum Ratings

（Tj＝25℃ unless otherwise specified）

■Electrical Characteristics

Symbol

Item

Conditions

Ratings

QCA200A40 QCA200A60

Unit

VCBO

Collector-Base Voltage

400

600

V

VCEX

Collector-Emitter Voltage

VBE

＝−2V

400

600

V

Emitter-Base Voltage

V

VEBO

10

IC

Collector Current

（）pw≦1ms

200

（400）

A

−IC

Reverse Collector Current

200

A

IB

Base Current

12

A

PT

Total power dissipation

TC

＝25℃

1250

W

Tj

Junction Temperature

−40 to ＋150

℃

Tstg

Storage Temperature

−40 to ＋125

℃

VISO

Isolation Voltage

A.C.1minute

2500

V

Mounting

Torque

Mounting

（M6）

Terminal

（M6）

Recommended Value 2.5-3.9

（25-40）

4.7

（48）

Recommended Value 2.5-3.9

（25-40）

4.7

（48）

N

･m

(

㎏f･B)

Mass

Typical Value

470

g

14.0

25.0

3-M6

L=10max

AMP110

t=0.5

25.0

108max

4-φ6.5

93±0.5

B2X

C2E1

E2

C1

B2

E2

E1

B1

B1X

Unit

：A

Symbol

Item

Conditions

Ratings

Min.

Max.

2.0

800

75

2.0

2.5

2.0

12.0

3.0

1.4

0.1

Unit

ICBO

Collector Cut-off Current

VCB

＝VCBO

mA

IEBO

Emitter Cut-off Current

VEB

＝VEBO

mA

300

VCEO（SUS）

Collector Emitter

Sustaning Voltage

QCA200A40

QCA200A60

QCA200A40

QCA200A60

Ic

＝1A

V

450

400

VCEX（SUS）

Ic

＝40A，IB2＝−8A

V

600

hFE

DC Current Gain

Ic

＝200A，VCE＝2V

Ic

＝200A，VCE＝5V

100

VCE(sat)

Collector-Emitter Saturation Voltage

Ic

＝200A，IB＝2.7A

V

VBE(sat)

Base-Emitter Saturation Voltage

Ic

＝200A，IB＝2.7A

V

μs

V

℃/W

ton

On Time

Storage Time

Fall Time

Transistor part

0.3

Diode part

ts

tf

Vcc

＝300V，Ic＝200A

IB1

＝4A，IB2＝−4A

−Ic＝200A

VECO

Rth(j-c)

Switching Time

Collector-Emitter Reverse Voltage

Thermal Impedance

(junction to case)

C1

B1

C2E1

B2

E2

B2X

QCA200 is a dual Darlington power transistor module which has series- connected high

speed, high power Darlington transistors. Each transistor has a reverse paralleled fast

recovery diode. The mounting base of the module is electrically isolated from

semiconductor elements for simple heatsink construction,

●

IC

＝200A、VCEX＝400/600V

●

Low saturation voltage for higher efficiency.

●

High DC current gain hFE

●

Isolated mounting base

●

VEBO 10V for faster switching speed.

（Applications）

Motor Control

（VVVF）, AC/DC Servo, UPS,

Switching Power Supply, Ultrasonic Application

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