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AS4C128M16D2 Datasheet(PDF) 41 Page - Alliance Semiconductor Corporation

Part # AS4C128M16D2
Description  Auto Refresh and Self Refresh
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4C128M16D2 Datasheet(HTML) 41 Page - Alliance Semiconductor Corporation

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AS4C128M16D2
Confidential
40
Version
2.0 – Oct/2014
Concurrent Auto-Precharge
DDR2 devices support the “concurrent Auto-Precharge” feature. A read with Auto-Precharge enabled, or a write
with Auto-Precharge enabled, may be followed by any command to the other bank, as long as that command does not
interrupt the read or write data transfer, and all other related limitations (e.g. contention between Read data
and Write data must be avoided externally and on the internal data bus.
The minimum delay from a read or write command with Auto-Precharge enabled, to a command to a different bank, is
summarized in the table below. As defined, the WL = RL - 1 for DDR2 devices which allows the command gap and
corresponding data gaps to be minimized.
From Command
ToCommand
(differentbank,
non-interrupting command)
Minimum Delay with
Concurrent Auto-Pre-
chargeSupport
Units
WRITE w/AP
Read or Read w/AP
(CL -1) + (BL/2) + tWTR
tCK
Write or Write w/AP
BL/2
tCK
Precharge or Activate
1
tCK
Read w/AP
Read orRead w/AP
BL/2
tCK
Write or Write w/AP
BL/2 + 2
tCK
Precharge or Activate
1
tCK


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