to Battery

V DD

OUTR+

GND

SDR

INR+

300 k

C S

Right Input

SDL

300 k

G0

OUTRí

OUTL+

OUTLí

G1

INRí

INL+

INLí

Left Input

Gain

Adjust

PWM

Gain

Adjust

PWM

H í

Bridge

H í

Bridge

Internal

Oscillator

Bias

Circuitry

ShortíCircuit

Protection

Ÿ

Ÿ

Copyright © 2016, Texas Instruments Incorporated

13

TPA2012D2

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SLOS438F – DECEMBER 2004 – REVISED MARCH 2017

Product Folder Links: TPA2012D2

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Copyright © 2004–2017, Texas Instruments Incorporated

9 Detailed Description

9.1 Overview

The TPA2012D2 is capable of driving 1.4 W/Ch at 5-V or 720 mW/Ch at 3.6-V into 8 Ω. The TPA2012D2 is also

capable of driving a load of 4 Ω.

The TPA2012D2 feature independent shutdown controls for each channel. High PSRR and differential

architecture provide increased immunity to noise and RF rectification. The TPA2012D2 provides thermal and

short-circuit protection.

9.2 Functional Block Diagram

9.3 Feature Description

9.3.1 Fixed Gain Setting

The TPA2012D2 has 4 selectable fixed gains: 6 dB, 12 dB, 18 dB, and 24 dB. Connect the G0 and G1 pins as

shown in Table 1.