STGW80H65FB datasheet(4/18 Pages) STMICROELECTRONICS

Part #	STGW80H65FB

Description	Low thermal resistance

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STGW80H65FB, STGWA80H65FB, STGWT80H65FB

4/18

DocID026401 Rev 1

2

Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 4. Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE = 0)

IC = 2 mA

650

V

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 80 A

1.6

2

V

VGE = 15 V, IC = 80 A

TJ = 125 °C

1.8

VGE = 15 V, IC = 80 A

TJ = 175 °C

1.9

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

5

6

7

V

ICES

Collector cut-off current

(VGE = 0)

VCE = 650 V

100

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ± 20 V

250

nA

Table 5. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

-

10524

-

pF

Coes

Output capacitance

-

385

-

pF

Cres

Reverse transfer

capacitance

-215

-pF

Qg

Total gate charge

VCC = 520 V, IC = 80 A,

VGE = 15 V, see Figure 23

-414

-

nC

Qge

Gate-emitter charge

-

78

-

nC

Qgc

Gate-collector charge

-

170

-

nC

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