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STGW80H65FB Datasheet(PDF) 3 Page - STMicroelectronics |
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STGW80H65FB Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 18 page  DocID026401 Rev 1 3/18 STGW80H65FB, STGWA80H65FB, STGWT80H65FB Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0) 650 V IC Continuous collector current at TC = 25 °C 120(1) 1. Current level is limited by bond wires. A IC Continuous collector current at TC = 100 °C 80 A ICP (2) 2. Pulse width limited by maximum junction temperature. Pulsed collector current 240 A VGE Gate-emitter voltage ±20 V PTOT Total dissipation at TC = 25 °C 469 W TSTG Storage temperature range - 55 to 150 °C TJ Operating junction temperature - 55 to 175 °C Table 3. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case 0.32 °C/W RthJA Thermal resistance junction-ambient 50 °C/W |
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