5

INA3221

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SBOS576B – MAY 2012 – REVISED MARCH 2016

Product Folder Links: INA3221

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Copyright © 2012–2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

–0.3 V to +26 V.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Voltage

6

V

Analog inputs

IN+, IN–

(2)

–26

26

V

–0.3

26

VPU

26

Digital outputs

Critical, warning, power valid

6

V

Timing control

26

Serial bus

Data line, SDA

(GND – 0.3)

6

V

Clock line, SCL

(GND – 0.3)

Current

Input, into any pin

5

mA

Open-drain, digital output

10

Temperature

–40

125

°C

150

–65

150

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

±2500

V

±1000

Machine model

±200

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Operating supply voltage

2.7

5.5

V

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report (SPRA953).

7.4 Thermal Information

INA3221

UNIT

RGV (VQFN)

16 PINS

Junction-to-ambient thermal resistance

36.5

°C/W

Junction-to-case (top) thermal resistance

42.7

°C/W

Junction-to-board thermal resistance

14.7

°C/W

Junction-to-top characterization parameter

0.5

°C/W

Junction-to-board characterization parameter

14.8

°C/W

Junction-to-case (bottom) thermal resistance

3.3

°C/W