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S3C2440X Datasheet(PDF) 82 Page - Samsung semiconductor |
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S3C2440X Datasheet(HTML) 82 Page - Samsung semiconductor |
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82 / 429 page  2003.09.25 Preliminary product information describes products that are in development, for which full characterization data and associated errata are not yet available Specifications and information herein are subject to change without notice. S3C2440X RISC MICROPROCESSOR NAND FLASH CONTROLLER 6-21 BLOCK ADDRESS REGISTER Register Address R/W Description Reset Value NFSBLK 0x4E000038 R/W NAND Flash programmable start block address 0x000000 NFEBLK 0x4E00003C R/W NAND Flash programmable end block address Nand Flash can be programmed between startand end address. When the Soft lock or Lock-tight is enabled and the Start and End address has same value, Entirearea of NAND flash will be locked. 0x000000 NFSBLK Bit Description Initial State SBLK_ADDR2 [23:16] The 3 rd block address of the block erase operation 0x00 SBLK_ADDR1 [15:8] The 2 nd block address of the block erase operation 0x00 SBLK_ADDR0 [7:0] The 1 st block address of the block erase operation (Only bit [7:5] are valid) 0x00 Note : Advance Flash’s block Address start from 3-address cycle. So block address register only needs 3-bytes . NFEBLK Bit Description Initial State EBLK_ADDR2 [23:16] The 3 rd block address of the block erase operation 0x00 EBLK_ADDR1 [15:8] The 2 nd block address of the block erase operation 0x00 EBLK_ADDR0 [7:0] The 1 st block address of the block erase operation (Only bit [7:5] are valid) 0x00 Note : Advance Flash’s block Address start from 3-address cycle. So block address register only needs 3-bytes . The NFSLK and NFEBLK can be changed while Soft lock bit(NFCONT[12]) is enabled. But cannot be changed when Lock-tight bit(NFCONT[13]) is set. when Lock-tight =1 or SoftLock=1 NAND flash memory Locked area (Read only) Prorammable/ Readable Area Locked area (Read only) NFSBLK Address High Low NFEBLK NFEBLK-1 NFSBLK NFEBLK Locked Area (Read only) When NFSBLK=NFEBLK |
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