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TLE4209 Datasheet(PDF) 7 Page - Infineon Technologies AG |
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TLE4209 Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 12 page ![]() TLE 4209 Overview Data Sheet 7 2000-09-05 Input-Interface Input REF Quiescent voltage VREFq – 200 240 mV IREF = 0 µA Input resistance RREF 4.5 6.0 7.5 k Ω 0 V < VREF < 0.5 V Input FB Quiescent voltage VFBq – 200 240 mV IFB = 0 µA Input resistance RFB 4.5 6.0 7.5 k Ω 0 V < VFB < 0.5 V Input/Output HYST Current Offset IHYSTIO 250 –2 0.35 3 µA IREF = IFB = 250 µA VHYST = VS / 2 IHYSTIO 40 – 1.3 0 1.3 µA IREF = IFB = 40 µA VHYST = VS / 2 Current Amplification AHYST = IHYST / (IREF – IFB) AHYST 0.8 0.95 1.1 − – 20 µA < I HYST < – 10 µA; 10 µA < I HYST < 20 µA; IREF = 250 µA VHYST = VS / 2 Current Gain GHYST = (IHYST - IHYSTIO40) / ( IREF – IFB) GHYST 0.8 0.95 1.1 - IHYST = +/-2 µA; IREF = 40 µA; VHYST = VS / 2 Threshold voltage High VHYH / VS 51 52 54 % – Deadband voltage High VDBH / VS 50 50.4 51 % – 1.7 Electrical Characteristics (cont’d) 8 V < VS < 18 V; IOUT1-2 = 0 A; – 40 °C < Tj < 150 °C (unless otherwise specified) Parameter Symbol Limit Values Unit Test Condition min. typ. max. |
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