VB60100C-M3

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Vishay General Semiconductor

Revision: 15-May-13

3

Document Number: 87988

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

Fig. 6 - Typical Transient Thermal Impedance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

T

T

T

T

Instantaneous Forward Voltage (V)

0

0.2

0.4

0.6

0.8

1

100

10

1

0.1

T

T

T

T

10

20

30

40

50

60

70

80

90

100

Percent of Rated Peak Reverse Voltage (%)

1000

100

10

1

0.001

0.1

0.01

0.1

1

10

100

10 000

1000

100

Reverse Voltage (V)

T

f = 1.0 MHz

V

0.01

0.1

1

10

100

10

1

0.1

t - Pulse Duration (s)

TO-263AB

Mounting Pad Layout

0.670 (17.02)

0.591 (15.00)

0.105 (2.67)

0.095 (2.41)

0.08 (2.032) MIN.

0.15 (3.81) MIN.

0.33 (8.38) MIN.

0.42 (10.66) MIN.

12

K

K

0.140 (3.56)

0.110 (2.79)

0.021 (0.53)

0.014 (0.36)

0.110 (2.79)

0.090 (2.29)

0 to 0.01 (0 to 0.254)

0.055 (1.40)

0.047 (1.19)

0.055 (1.40)

0.045 (1.14)

0.190 (4.83)

0.160 (4.06)

0.205 (5.20)

0.195 (4.95)

0.624 (15.85)

0.591 (15.00)

0.037 (0.940)

0.027 (0.686)

0.105 (2.67)

0.095 (2.41)

0.360 (9.14)

0.320 (8.13)

0.411 (10.45)

0.380 (9.65)

0.245 (6.22)

MIN.