VB60100C-M3

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Vishay General Semiconductor

Revision: 15-May-13

1

Document Number: 87988

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C

• Material

categorization:

For

definitions

of

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters, and reverse battery protection.

MECHANICAL DATA

Case: TO-263AB

Molding compound meets UL 94 V-0 flammability rating

Base

P/N-M3

-

halogen-free,

RoHS-compliant,

and

commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



M3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

PRIMARY CHARACTERISTICS

Package

TO-263AB

2 x 30 A

100 V

320 A

0.66 V

150 °C

Diode variation

Common cathode

TMBS

®

VB60100C

1

2

K

TO-263AB

PIN 1

PIN 2

K

HEATSINK

PARAMETER

SYMBOL

VB60100C

UNIT

Maximum repetitive peak reverse voltage

100

V

Maximum average forward rectified current (fig. 1)

per device

60

A

per diode

30

Peak forward surge current 8.3 ms single half sine-wave



superimposed on rated load per diode

320

A

Voltage rate of change (rated VR)

dV/dt

10 000

V/μs

Operating junction and storage temperature range

- 40 to + 150

°C