Philips Semiconductors

PH8230

N-channel enhancement mode field-effect transistor

Product data

Rev. 01 — 23 June 2003

4 of 12

9397 750 11118

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

4.

Thermal characteristics

4.1 Transient thermal impedance

Table 3:

Thermal characteristics

Symbol Parameter

Conditions

Min Typ Max Unit

-

-

2.5

K/W

Fig 4.

Transient thermal impedance from junction to mounting base as a function of pulse duration.

03am22

10-3

10-2

10-1

1

10

10-5

10-4

10-3

10-2

10-1

1

10

tp (s)

Zth(j-mb)

(K/W)

single pulse

δ = 0.5

0.2

0.1

0.05

0.02