Philips Semiconductors

PH8230

N-channel enhancement mode field-effect transistor

Product data

Rev. 01 — 23 June 2003

2 of 12

9397 750 11118

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

3.

Limiting values

Table 2:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

drain-source voltage (DC)

-

30

V

gate-source voltage (DC)

-

±20

V

drain current (DC)

-

30

A

peak drain current

-

120

A

total power dissipation

-

50

W

storage temperature

−55

+150

°C

junction temperature

−55

+150

°C

Source-drain diode

source (diode forward) current (DC)

-

30

A

-

120

A