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PH8230 Datasheet(PDF) 1 Page - NXP Semiconductors |
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PH8230 Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 12 page ![]() PH8230 N-channel enhancement mode field-effect transistor Rev. 01 — 23 June 2003 Product data M3D748 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a SOT669 (LFPAK) package. Product availability: PH8230 in SOT669 (LFPAK). 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information s Low thermal resistance s SO8 equivalent area footprint s Low gate drive current s Low on-state resistance. s DC-to-DC converters s Switched mode power supplies s Portable appliances s Notebook computers. s VDS ≤ 30 V s ID ≤ 30 A s Ptot ≤ 50 W s RDSon ≤ 8.2 mΩ Table 1: Pinning - SOT669 (LFPAK), simplified outline and symbol Pin Description Simplified outline Symbol 1,2,3 source (s) SOT669 (LFPAK) 4 gate (g) mb drain (d) 1 Top view MBL286 23 mb 4 MBL288 d s1 s2 s3 g |
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