Philips Semiconductors

PH8230

N-channel enhancement mode field-effect transistor

Product data

Rev. 01 — 23 June 2003

7 of 12

9397 750 11118

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Fig 9.

Gate-source threshold voltage as a function of

junction temperature.

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

Fig 11. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values.

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

values.

03am27

0

0.5

1

1.5

2

2.5

-100

0

100

200

VGS(th)

(V)

Tj (°C)

03am28

10-5

10-4

10-3

10-2

10-1

0123

VGS (V)

ID

(A)

min

typ

max

03am29

102

103

104

10-1

1

10

102

VDS (V)

C

(pF)

Ciss

Coss

Crss

03am30

0

20

40

60

80

00.5

11.5

VSD (V)

IS

(A)

150

°C

Tj = 25 °C