Philips Semiconductors

PH8230

N-channel enhancement mode field-effect transistor

Product data

Rev. 01 — 23 June 2003

6 of 12

9397 750 11118

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Fig 5.

Output characteristics: drain current as a

function of drain-source voltage; typical values.

Fig 6.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Fig 7.

Drain-source on-state resistance as a function

of drain current; typical values.

Fig 8.

Normalized drain-source on-state resistance

factor as a function of junction temperature.

03am23

0

25

50

75

100

0246

VDS (V)

ID

(A)

4 V

3 V

3.5 V

4.5 V

VGS = 10 V

03am24

0

20

40

60

80

01.5

34.5

VGS (V)

ID

(A)

25

°C

150

°C

03am25

0

10

20

30

40

50

020

40

60

ID (A)

RDSon

(m

Ω)

3.5 V

3 V

4 V

4.5 V

10 V

03am26

0

0.6

1.2

1.8

-100

0

100

200

Tj (°C)

a

a

R

DSon

R

DSon 25 C

°

()

-----------------------------

=