PH8230 datasheet(5/12 Pages) PHILIPS

Part #	PH8230

Description	N-channel enhancement mode field-effect transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

PH8230

N-channel enhancement mode ﬁeld-effect transistor

Product data

Rev. 01 — 23 June 2003

5 of 12

9397 750 11118

5.

Characteristics

Table 4:

Characteristics

Tj =25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS drain-source breakdown voltage

ID = 10 mA; VGS = 0 V

30

--V

VGS(th)

gate-source threshold voltage

ID = 1 mA; VDS =VGS

1

1.75

2.5

V

IDSS

drain-source leakage current

VDS =30V; VGS =0V; Tj =25 °C

-

0.06

1

µA

IGSS

gate-source leakage current

VGS = ± 16 V; VDS = 0 V

-

0.9

10

µA

RDSon

drain-source on-state resistance

VGS = 10 V; ID = 15 A

-

6.3

8.2

m

Ω

VGS = 4.5 V; ID = 15 A

-

10.5

15.3

µΩ

Dynamic characteristics

gfs

forward transconductance

VDS =10V; ID =15A

27

45

-

S

Qg(tot)

total gate charge

ID = 30 A; VDD =10V; VGS =10V

-

22

-

nC

Qgs

gate-source charge

-

5

-

nC

Qgd

gate-drain (Miller) charge

-

5

-

nC

Ciss

input capacitance

VGS =0V; VDS = 10 V; f = 1 MHz

-

1500 -

pF

Coss

output capacitance

-

400

-

pF

Crss

reverse transfer capacitance

-

220

-

pF

td(on)

turn-on delay time

VDD =10V; ID = 15 A; VGS =10V;RG = 4.7 Ω

-15

-

ns

tr

rise time

-55

-

ns

td(off)

turn-off delay time

-

48

-

ns

tf

fall time

-11

-

ns

Source-drain (reverse) diode

VSD

source-drain (diode forward) voltage IS = 30 A; VGS = 0 V

-

0.85

1.11

V

trr

reverse recovery time

IS = 30 A; dIS/dt = −50 A/µs; VGS = 0 V

-

60

-

ns

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