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VS-EBU15006HF4 Datasheet(PDF) 4 Page - Vishay Siliconix |
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VS-EBU15006HF4 Datasheet(HTML) 4 Page - Vishay Siliconix |
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4 / 7 page  VS-EBU15006HF4 www.vishay.com Vishay Semiconductors Revision: 16-Jun-15 4 Document Number: 94806 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt Fig. 9 - Reverse Recovery Waveform and Definitions IF(AV) - Average Forward Current (A) 0 50 100 150 200 250 40 60 80 100 120 140 160 180 DC IF(AV) - Average Forward Current (A) 0 50 100 150 200 250 0 50 100 150 200 250 300 350 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC RMS Limit dIF/dt (A/μs) 50 100 100 1000 150 200 250 I F = 50 A, 125 °C I F = 50 A, 25 °C typical value dIF/dt (A/μs) 0 500 100 1000 1000 1500 2000 2500 typical value 3000 3500 I F = 50 A, 125 °C I F = 50 A, 25 °C Q rr 0.5 I RRM dI (rec)M/dt 0.75 I RRM I RRM t rr t b t a I F dI F/dt 0 (1) (2) (3) (4) (5) (1) dI F/dt - rate of change of current through zero crossing (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 IRRM extrapolated to zero current. (4) Q rr - area under curve defined by trr and I RRM t rr x IRRM 2 Q rr = (5) dI (rec)M/dt - peak rate of change of current during t b portion of trr |
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