VS-EBU15006HF4

www.vishay.com

Vishay Semiconductors

Revision: 16-Jun-15

1

Document Number: 94806

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

FEATURES

• Ultrafast recovery time

• 175 °C max. operating junction temperature

• Screw mounting only

• AEC-Q101 qualified

• Material categorization:



for definitions of compliance please see

www.vishay.com/doc?99912

BENEFITS

• Reduced RFI and EMI

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION/APPLICATIONS

These diodes are optimized to reduce losses and EMI/RFI in

high frequency power conditioning systems.



The softness of the recovery eliminates the need for a

snubber in most applications. These devices are ideally

suited for HF welding, power converters and other

applications where switching losses are not significant

portion of the total losses.



PRODUCT SUMMARY

Package

150 A

600 V

1.08 V

50 ns

175 °C

Diode variation

Single die

Cathode

Anode

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

UNITS

Cathode to anode voltage

600

V

Continuous forward current

150

A

Single pulse forward current

1200

Operating junction and storage

temperatures

-55 to +175

°C

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,



blocking voltage

600

-

-

V

Forward voltage

-

1.27

1.63

-

1.15

1.43

-

1.08

1.32

Reverse leakage current

-

-

8

μA

-

-

0.5

mA

Junction capacitance

-

70

-

pF

Series inductance

Measured lead to lead 5 mm from package body

-

3.5

-

nH