If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Power Supply Voltage

V

CC1

−0.3V to +6.5V

V

CC2

−0.3V to +6.5V

V

p

−0.3V to +6.5V

Voltage on Any Pin

with GND = 0V (V

−0.3V to V

Storage Temperature Range (T

−65˚C to +150˚C

Lead Temperature (T

(solder, 4 sec.)

+260˚C

Recommended Operating

Conditions

Min

Max

Units

Power Supply Voltage

V

CC1

2.3

5.5

V

V

CC2

V

CC1

V

CC1

V

V

p

V

CC

5.5

V

Operating Temperature (T

−40

+85

˚C

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to

the device may occur. Recommended operating conditions indicate condi-

tions for which the device is intended to be functional, but do not guarantee

specific performance limits. For guaranteed specifications and test condi-

tions, see the Electrical Characteristics. The guaranteed specifications apply

only for the test conditions listed.

Note 2: This device is a high performance RF integrated circuit with an ESD

should only be done at ESD protected work stations.

Electrical Characteristics

V

Symbol

Parameter

Conditions

Values

Units

Min

Typ

Max

I

CC

Power Supply Current

LMX2306

V

1.7

mA

LMX2316

V

2.5

mA

LMX2326

V

4.0

mA

I

CC-PWDN

Powerdown Current

V

1

µA

f

IN

RF Input Operating

Frequency

LMX2306

V

25

550

MHz

LMX2316

V

0.1

1.2

GHz

LMX2326

V

0.1

2.1

GHz

V

0.1

2.8

GHz

f

osc

Maximum Oscillator Frequency

5

40

MHz

f

φ

Maximum Phase Detector Frequency

10

MHz

Pf

IN

RF Input Sensitivity

V

−15

+0

dBm

V

−10

+0

dBm

V

−10

+0

dBm

P

osc

Oscillator Sensitivity

OSC

IN

−5

dBm

V

IH

High-Level Input Voltage

(Note 4)

0.8 x V

CC

V

V

IL

Low-Level Input Voltage

(Note 4)

0.2 x

V

CC

V

I

IH

High-Level Input Current

V

−1.0

1.0

µA

I

IL

Low-Level Input Current

V

(Note 4)

−1.0

1.0

µA

I

IH

Oscillator Input Current

V

100

µA

I

IL

Oscillator Input Current

V

−100

µA

ICP

o-source

Charge Pump Output Current

V

(Note 3)

−250

µA

ICP

o-sink

V

(Note 3)

250

µA

ICP

o-source

V

(Note 3)

−1.0

mA

ICP

o-sink

V

(Note 3)

1.0

mA

ICP

o-Tri

Charge Pump TRI-STATE Current

0.5

≤ V

−1.0

1.0

nA

ICP

o-sink vs

CP Sink vs Source Mismatch

V

5

%

ICP

o-source

T

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