BAS116LT1G datasheet(2/4 Pages) ONSEMI

Part #	BAS116LT1G

Description	Switching Diode

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Manufacturer	ONSEMI [ON Semiconductor]

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BAS116L

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage (IBR = 100 mAdc)

V(BR)

75

−

Vdc

Reverse Voltage Leakage Current (VR = 75 Vdc)

Reverse Voltage Leakage Current (VR = 75 Vdc, TJ = 150°C)

IR

−

5.0

80

nAdc

Forward Voltage (IF = 1.0 mAdc)

Forward Voltage (IF = 10 mAdc)

Forward Voltage (IF = 50 mAdc)

Forward Voltage (IF = 150 mAdc)

VF

−

900

1000

1100

1250

mV

Diode Capacitance (VR = 0 V, f = 1.0 MHz)

CD

−

2.0

pF

Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1)

trr

−

3.0

ms

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. A 2.0 k

W variable resistor adjusted for a Forward Current (IF) of 10 mA.

2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

3. tp » trr

+10 V

2.0 k

820

W

0.1

mF

DUT

VR

100

mH

0.1

mF

50

W Output

Pulse

Generator

50

W INPUT

SAMPLING

OSCILLOSCOPE

tr

tp

t

10%

90%

IF

IR

trr

t

iR(REC) = 1.0 mA

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at iR(REC) = 1.0 mA)

IF

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

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