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K2611B Datasheet(PDF) 6 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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K2611B Datasheet(HTML) 6 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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6 / 8 page  www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299 6/8 K2611B Product Description WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS WIN SEM I M ICROELECTRON ICS Silicon Silicon Silicon Silicon N-Channel N-Channel N-Channel N-Channel MOSFET MOSFET MOSFET MOSFET Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform VD S D U T IS D L Driver S am e Ty pe a s D U T RG VG S VD D dv/dt controlled by RG I conteolled by pulse period S D VG S (Driver) D = Gate Pulse Width Gate Pulse Period 1 0 V IS D I ,Body Diode Forward Current F M (D U T) VD S IS D (D U T) IR M di/dt Body Diode Reverse Current Body Diode Recovery dv/dt VD D Body Diode Forward Voltage Drop VS D |
Similar Part No. - K2611B_14 |
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Similar Description - K2611B_14 |
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