K2611B_14 datasheet(4/8 Pages) WINSEMI

Part #	K2611B

Description	Silicon N-Channel MOSFET

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Manufacturer	WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]

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K2611B Product Description

WIN SEM I

M ICROELECTRON ICS

WIN SEM I

M ICROELECTRON ICS

WIN SEM I

M ICROELECTRON ICS

WIN SEM I

M ICROELECTRON ICS

WIN SEM I

M ICROELECTRON ICS

Silicon

Silicon N-Channel

N-Channel

N-Channel MOSFET

MOSFET

Fig.9 Maximum Safe Operation Area

Fig.10 Maximum Drain Current

vs Case temperature

Fig.11 Transient thermal Response Curve

Fig.7 Breakdown Voltage Variation

vs.Temperature

Fig.8 On-Resistance Variation

vs.Temperature

- 7 5

- 5 0

- 2 5

0

2 5

5 0

7 5

1 0 0

1 2 5

1 5 0

0 . 8

0 . 9

1 . 0

1 . 1

1 . 2

T [ C ]

j

。

Notes:

1.V

=0V

2.I =250uA

G S

D

- 7 5

- 5 0

- 2 5

0

2 5

5 0

7 5

1 0 0

1 2 5

1 5 0

Notes:

1.V

=10V

2.I =5.5A

G S

D

0 . 0

0 . 5

1 . 0

1 . 5

2 . 0

2 . 5

3 . 0

3 . 5

4 . 0

T [ C ]

j

。

1 0µ s

1 0 0µ s

1 ms

1 0 ms

1 0 0 ms

D C

Operation on This Area

is limited by RDS(ON)

Note:

1.T =25 C

2.T =150 C

3.Single Pulse

C

。

V

Drain-SourceVoltage[V]

D S

1 0

0

1 0

2

1 0

1

1 0

3

1 0

- 1

1 0

0

1 0

1

1 02

2 5

5 0

7 5

1 0 0

1 2 5

1 5 0

0

2

4

6

8

1 0

1 2

T Case Temperature[ C ]

C

。

D 0 5

= .

0 2

.

0 1

.

0 0 5

.

0 0 2

.

0 0 1

.

Single pulse

1.Z

(t)=0.45 C/W Max.

2.Duty Factor,D=t1/t2

3.T -T =P

*

θJ C

。

JM

C

DM

Z

(t)

θJ C

*No te s:

1 E - 5

1 E - 4

1 E - 3

0 . 0 1

0 . 1

1

1 0

t Square Wave Pulse Duration[sec]

1

0 . 1

0 . 0 1

PD M

t1

t2

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K2611B Datasheet(PDF) 4 Page - Shenzhen Winsemi Microelectronics Co., Ltd

K2611B Datasheet(HTML) 4 Page - Shenzhen Winsemi Microelectronics Co., Ltd

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