IDT71V2546S_11 datasheet(10/21 Pages) IDT

Part #	IDT71V2546S

Description	3.3V Synchronous ZBT SRAM

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Manufacturer	IDT [Integrated Device Technology]

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10 / 21 page

6.42

10

IDT71V2546, 128K x 36, 3.3V Synchronous ZBT™ SRAM

with 2.5V I/O, Burst Counter, and Pipelined Outputs

Commercial and Industrial Temperature Ranges

Burst Write Operation(1)

Burst Read Operation(1)

Write Operation(1)

NOTES:

1. H = High; L = Low; X = Don’t Care; Z = High Impedance..

2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.

NOTES:

1. H = High; L = Low; X = Don’t Care; Z = High Impedance.

2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.

NOTES:

1. H = High; L = Low; X = Don’t Care; ? = Don’t Know; Z = High Impedance.

2. CE = L is defined as CE1 = L, CE2 = L and CE2 = H. CE = H is defined as CE1 = H, CE2 = H or CE2 = L.

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