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IDT71V2546S Datasheet(PDF) 5 Page - Integrated Device Technology |
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IDT71V2546S Datasheet(HTML) 5 Page - Integrated Device Technology |
5 / 21 page 6.42 IDT71V2546 128K x 36, 3.3V Synchronous ZBT™ SRAM with 2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges 5 Absolute Maximum Ratings(1) 119 BGA Capacitance(1) (TA = +25° C, f = 1.0MHz) NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VDD terminals only. 3. VDDQ terminals only. 4. Input terminals only. 5. I/O terminals only. 6. This is a steady-state DC parameter that applies after the power supply has reached its nominal operating value. Power sequencing is not necessary; however, the voltage on any input or I/O pin cannot exceed VDDQ during power supply ramp up. 7. TA is the "instant on" case temperature. l o b m y Sg n i t a R & l a i c r e m m o C s e u l a V l a i r t s u d n I t i n U V M R E T ) 2 ( h ti w e g a tl o V l a n i m r e T D N G o t t c e p s e R 6 . 4 + o t 5 . 0 -V V M R E T ) 6 , 3 ( h ti w e g a tl o V l a n i m r e T D N G o t t c e p s e R V o t 5 . 0 - D D V V M R E T ) 6 , 4 ( h ti w e g a tl o V l a n i m r e T D N G o t t c e p s e R V o t 5 . 0 - D D 5 . 0 +V V M R E T ) 6 , 5 ( h ti w e g a tl o V l a n i m r e T D N G o t t c e p s e R V o t 5 . 0 - Q D D 5 . 0 +V TA )7 ( l a i c r e m m o C e r u t a r e p m e T g n it a r e p O 0 7 + o t 0 - oC l a i r t s u d n I e r u t a r e p m e T g n it a r e p O 5 8 + o t 0 4 - oC T S A I B e r u t a r e p m e T s a i B r e d n U 5 2 1 + o t 5 5 - oC T G T S e g a r o t S e r u t a r e p m e T 5 2 1 + o t 5 5 - oC PT n o it a p i s s i D r e w o P0 . 2W I T U O t n e r r u C t u p t u O C D0 5A m 6 0 l b t 4 9 2 5 l o b m y Sr e t e m a r a P ) 1 ( s n o i t i d n o C. x a Mt i n U C N I e c n a ti c a p a C t u p n IV N I V d 3 =5 F p C O /I e c n a ti c a p a C O /IV T U O V d 3 =7 F p 7 0 l b t 4 9 2 5 100 TQFP Capacitance(1) (TA = +25° C, f = 1.0MHz) l o b m y Sr e t e m a r a P ) 1 ( s n o i t i d n o C. x a Mt i n U C N I e c n a ti c a p a C t u p n IV N I V d 3 =7 F p C O /I e c n a ti c a p a C O /IV T U O V d 3 =7 F p a 7 0 l b t 4 9 2 5 NOTE: 1. This parameter is guaranteed by device characterization, but not production tested. NOTE: 1. This parameter is guaranteed by device characterization, but not production tested. |
Similar Part No. - IDT71V2546S_11 |
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Similar Description - IDT71V2546S_11 |
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