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IDT71V546S Datasheet(PDF) 5 Page - Integrated Device Technology

Part # IDT71V546S
Description  3.3V Synchronous SRAM
Download  21 Pages
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Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

IDT71V546S Datasheet(HTML) 5 Page - Integrated Device Technology

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6.42
5
IDT71V546, 128K x 36, 3.3V Synchronous SRAM with
ZBT
™ Feature, Burst Counter and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Absolute Maximum Ratings(1)
100 TQFP Capacitance
(TA = +25°C, f = 1.0MHz, TQFP package)
Symbol
Rating
Commercial &
Industrial Values
Unit
VTERM(2)
Terminal Voltage
with Respect to GND
-0.5 to +4.6
V
VTERM(3)
Terminal Voltage
with Respect to GND
-0.5 to VDD+0.5
V
TA(4)
Commercial
Operating Ambient
Temperature
0 to +70
o
C
Industrial
Operating Ambient
Temperature
-40 to +85
o
C
TBIAS
Temperature Under Bias
-55 to +125
o
C
TSTG
Storage Temperature
-55 to +125
o
C
PT
Power Dissipation
2.0
W
IOUT
DC Output Current
50
mA
3821 tbl 05
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
2. VDD and Input terminals only.
3. I/O terminals.
4. During production testing, the case temperature equals the ambient temperature.
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
Symbol
Parameter(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
5
pF
CI/O
I/O Capacitance
VOUT = 3dV
7
pF
3821 tbl 06
RecommendedOperating
Temperature and Supply Voltage
Recommended DC Operating
Conditions
Grade
Ambient
Temperature(1)
VSS
VDD
Commercial
0OC to +70OC0V
3.3V±5%
Industrial
-40OC to +85OC0V
3.3V±5%
3821 tbl 03
NOTES:
1. VIL (min.) = –1.0V for pulse width less than tCYC/2, once per cycle.
2. VIH (max.) = +6.0V for pulse width less than tCYC/2, once per cycle.
3. VDD needs to be ramped up smoothly to the operating level. If there are any
glitches on VDD that cause the voltage level to drop below 2.0 volts then the
device needs to be reset by holding VDD to 0.0 volts for a minimum of 100 ms.
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD(3)
Supply Voltage
3.135
3.3
3.465
V
VSS
Ground
0
0
0
V
VIH
Input High Voltage - Inputs
2.0
____
4.6
V
VIH
Input High Voltage - I/O
2.0
____
VDD+0.3(2)
V
VIL
Input Low Voltage
-0.5(1)
____
0.8
V
3821 tbl 04
NOTES:
1. During production testing, the case temperature equals the ambient temperature.


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