Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

IDT71V546S Datasheet(PDF) 2 Page - Integrated Device Technology

Part # IDT71V546S
Description  3.3V Synchronous SRAM
Download  21 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

IDT71V546S Datasheet(HTML) 2 Page - Integrated Device Technology

  IDT71V546S_08 Datasheet HTML 1Page - Integrated Device Technology IDT71V546S_08 Datasheet HTML 2Page - Integrated Device Technology IDT71V546S_08 Datasheet HTML 3Page - Integrated Device Technology IDT71V546S_08 Datasheet HTML 4Page - Integrated Device Technology IDT71V546S_08 Datasheet HTML 5Page - Integrated Device Technology IDT71V546S_08 Datasheet HTML 6Page - Integrated Device Technology IDT71V546S_08 Datasheet HTML 7Page - Integrated Device Technology IDT71V546S_08 Datasheet HTML 8Page - Integrated Device Technology IDT71V546S_08 Datasheet HTML 9Page - Integrated Device Technology Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 21 page
background image
2
IDT71V546, 128K x 36, 3.3V Synchronous SRAM with
ZBT
™ Feature, Burst Counter and Pipelined Outputs
Commercial and Industrial Temperature Ranges
Pin Definitions(1)
NOTE:
1. All synchronous inputs must meet specified setup and hold times with respect to CLK.
Symbol
Pin Function
I/O
Active
Description
A0 - A16
Address Inputs
I
N/A
Synchronous Address inputs. The address register is triggered by a
combination of the rising edge of CLK and ADV/LD Low, CEN Low and true
chip enables.
ADV/LD
Address/Load
I
N/A
ADV/LD is a synchronous input that is used to load the internal registers with
new address and control when it is sampled low at the rising edge of clock with
the chip selected. When ADV/LD is low with the chip deselected, any burst in
progress is terminated. When ADV/LD is sampled high then the internal burst
counter is advanced for any burst that was in progress. The external addresses
are ignored when ADV/LD is sampled high.
R/W
Read/Write
I
N/A
R/W signal is a synchronous input that identified whether the current load cycle
initiated is a Read or Write access to the memory array. The data bus activity for
the current cycle takes place two clock cycles later.
CEN
Clock Enable
I
LOW
Synchronous Clock Enable Input. When CEN is sampled high, all other
synchronous inputs, including clock are ignored and outputs remain unchanged.
The effect of CEN sampled high on the device outputs is as if the low to high
clock transition did not occur. For normal operation, CEN must be sampled low
at rising edge of clock.
BW1 - BW4
Individual Byte
Write Enables
I
LOW
Synchronous byte write enables. Enable 9-bit byte has its own active low byte
write enable. On load write cycles (When R/W and ADV/LD are sampled low)
the appropriate byte write signal (BW1 - BW4) must be valid. The byte write
signal must also be valid on each cycle of a burst write. Byte Write signals are
ignored when R/W is sampled high. The appropriate byte(s) of data are written
into the device two cycles later. BW1 - BW4 can all be tied low if always doing
write to the entire 36-bit word.
CE1
, CE2
Chip Enables
I
LOW
Synchronous active low chip enable. CE1 and CE2 are used with CE2 to
enable the IDT71V546. (CE1 or CE2 sampled high or CE2 sampled low) and
ADV/LD low at the rising edge of clock, initiates a deselect cycle. the ZBT
has a two cycle deselect, i.e., the data bus will tri-state two clock cycles after
deselect is initiated.
CE2
Chip Enable
I
HIGH
Synchronout active high chip enable. CE2 is used with CE1 and CE2 to enable
the chip. CE2 has inverted polarity but otherwise identical to CE1 and CE2.
CLK
Clock
I
N/A
This is the clock input to the IDT71V546. Except for OE, all timing references for
the device are made with respect to the rising edge of CLK.
I/O0 - I/O31
I/OP1 - I/OP4
Data Input/Output
I/O
N/A
Synchronous data input/output (I/O) pins. Both the data input path and data
output path are registered and triggered by the rising edge of CLK.
LBO
Linear Burst
Order
I
LOW
Burst order selection input. When LBO is high the Interleaved burst sequence is
selected. When LBO is low the Linear burst sequence is selected. LBO is a
static DC input.
OE
Output Enable
I
LOW
Asynchronous output enable. OE must be low to read data from the 71V546.
When OE is high the I/O pins are in a high-impedance state. OE does not need
to be actively controlled for read and write cycles. In normal operation, OE can
be tied low.
VDD
Power Supply
N/A
N/A
3.3V power supply input.
VSS
Ground
N/A
N/A
Ground pin.
3821 tbl 02


Similar Part No. - IDT71V546S_08

ManufacturerPart #DatasheetDescription
logo
Integrated Device Techn...
IDT71V546S100PF IDT-IDT71V546S100PF Datasheet
178Kb / 20P
   128K x 36, 3.3V Synchronous SRAM with ZBT Feature, Burst Counter and Pipelined Outputs
IDT71V546S100PFI IDT-IDT71V546S100PFI Datasheet
178Kb / 20P
   128K x 36, 3.3V Synchronous SRAM with ZBT Feature, Burst Counter and Pipelined Outputs
More results

Similar Description - IDT71V546S_08

ManufacturerPart #DatasheetDescription
logo
Integrated Device Techn...
IDT71V2546S IDT-IDT71V2546S_11 Datasheet
733Kb / 21P
   3.3V Synchronous ZBT SRAM
logo
White Electronic Design...
EDI2DL32256V WEDC-EDI2DL32256V Datasheet
97Kb / 8P
   256Kx32 Synchronous Pipline Burst SRAM 3.3V
logo
Alliance Semiconductor ...
AS7C33512FT18A ALSC-AS7C33512FT18A Datasheet
506Kb / 19P
   3.3V 512K x 18 Flow-through synchronous SRAM
AS7C332MPFS18A ALSC-AS7C332MPFS18A Datasheet
508Kb / 19P
   3.3V 2M x 18 pipelined burst synchronous SRAM
AS7C331FT18A ALSC-AS7C331FT18A Datasheet
512Kb / 19P
   3.3V 1M x 18 Flow-through synchronous SRAM
AS7C33256PFS18B ALSC-AS7C33256PFS18B Datasheet
536Kb / 19P
   3.3V 256K X 18 pipeline burst synchronous SRAM
AS7C33128PFS18B ALSC-AS7C33128PFS18B Datasheet
537Kb / 19P
   3.3V 128K x 18 pipeline burst synchronous SRAM
AS7C33256FT18B ALSC-AS7C33256FT18B Datasheet
401Kb / 19P
   3.3V 256K x 18 Flow Through Synchronous SRAM
AS7C332MFT18A ALSC-AS7C332MFT18A Datasheet
511Kb / 19P
   3.3V 2M x 18 Flow-through synchronous SRAM
AS7C33128PFD18B ALSC-AS7C33128PFD18B Datasheet
538Kb / 19P
   3.3V 128K x 18 pipeline burst synchronous SRAM
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com