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IDT7035S Datasheet(PDF) 8 Page - Integrated Device Technology |
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IDT7035S Datasheet(HTML) 8 Page - Integrated Device Technology |
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8 / 19 page  6.42 IDT7035S/L High-Speed 8K x 18 Dual-Port Static RAM Industrial and Commercial Temperature Ranges 8 AC Electrical Characteristics Over the Operating Temperature and Supply Voltage(5) NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2). 2. This parameter is guaranteed by device characterization, but is not production tested. 3. To access RAM, CE = VIL, UB or LB = VIL, SEM = VIH. To access semaphore, CE = VIH or UB & LB = VIH, and SEM = VIL. Either condition must be valid for the entire tEW time. 4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage and temperature, the actual tDH will always be smaller than the actual tOW. 5. 'X' in part numbers indicates power rating (S or L). Timing of Power-Up Power-Down CE 4088 drw 06 tPU ICC ISB tPD 50% 50% . Symbol Parameter 7035X15 Com'l Only 7035X20 Com'l & Ind Unit Min. Max. Min. Max. WRITE CYCLE tWC Write Cycle Time 15 ____ 20 ____ ns tEW Chip Enable to End-of-Write(3) 12 ____ 15 ____ ns tAW Address Valid to End-of-Write 12 ____ 15 ____ ns tAS Address Set-up Time(3) 0 ____ 0 ____ ns tWP Write Pulse Width 12 ____ 15 ____ ns tWR Write Recovery Time 0 ____ 0 ____ ns tDW Data Valid to End-of-Write 10 ____ 15 ____ ns tHZ Output High-Z Time(1,2) ____ 10 ____ 12 ns tDH Data Hold Time(4) 0 ____ 0 ____ ns tWZ Write Enable to Output in High-Z (1,2) ____ 10 ____ 12 ns tOW Output Active from End-of-Write(1,2,4) 0 ____ 0 ____ ns tSWRD SEM Flag Write to Read Time 5 ____ 5 ____ ns tSPS SEM Flag Contention Window 5 ____ 5 ____ ns 4088 tbl 13 |
Similar Part No. - IDT7035S_15 |
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Similar Description - IDT7035S_15 |
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