2SB547 datasheet(1/2 Pages) ISC

Part #	2SB547

Description	Silicon PNP Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

1

isc Silicon PNP Power Transistor

2SB547

DESCRIPTION

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -150V (Min)

·

Collector Power Dissipation-

: PC= 30W(Max)@ TC= 25℃

·

Complement to Type 2SD402

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for use in line-operated color TV vertical deflection

of complementary symmetry circuit applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-200

V

VCEO

Collector-Emitter Voltage

-150

V

VEBO

Emitter-Base Voltage

-5.0

V

IC

Collector Current-Continuous

-2

A

ICM

Collector Current-Peak

-3

A

IBM

Base Current-Peak

-1.5

A

PC

Total Power Dissipation

@ TC=25℃

30

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-a

Thermal Resistance,Junction to Ambient

78

℃

/W

Rth j-c

Thermal Resistance,Junction to Case

4.16

℃

/W

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