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2SK3502 Datasheet(PDF) 1 Page - Fuji Electric |
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2SK3502 Datasheet(HTML) 1 Page - Fuji Electric |
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1 / 4 page  1 TO-220F Item Symbol Ratings Unit Drain-source voltage VDS 600 Continuous drain current ID ±10 Pulsed drain current ID(puls] ±40 Gate-source voltage VGS ±30 Repetitive or non-repetitive IAR *2 10 Maximum Avalanche Energy EAS*1 217 Maximum Drain-Source dV/dt dVDS/dt *4 20 Peak Diode Recovery dV/dt dV/dt *3 5 Max. power dissipation PD Ta=25°C 2.16 Tc=25°C 50 Operating and storage Tch +150 temperature range Tstg Electrical characteristics (Tc =25°C unless otherwise specified) Thermalcharacteristics 2SK3502-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS=600V VGS=0V VDS=480V VGS=0V VGS=±30V ID=5A VGS=10V ID=5A VDS=25V VCC=300V ID=5A VGS=10V RGS=10 Ω Min. Typ. Max. Units V V µA nA Ω S pF nC A V µs µC ns Min. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient 2.5 58.0 °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions ID=1mA VGS=0V ID= 250µA VDS=VGS Tch=25°C Tch=125°C VDS=0V VDS=25V VGS=0V f=1MHz VCC=250V ID=10A VGS=10V L=3.99mH Tch=25°C IF=10A VGS=0V Tch=25°C IF=10A VGS=0V -di/dt=100A/µs Tch=25°C V A A V A mJ kV/µs kV/µs W °C °C 600 3.0 5.0 25 250 10 100 0.58 0.75 48 1200 1800 140 210 69 17 26 15 23 35 53 711 30 45 11 16.5 10 15 10 1.00 1.50 0.75 5.0 -55 to +150 Outline Drawings Equivalent circuit schematic Gate(G) Source(S) Drain(D) Super FAP-G Series *3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C = < = < = < *1 L=3.99mH, Vcc=60V *2 Tch 150°C = < *4 VDS 600V < = |
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Similar Description - 2SK3502 |
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