FERD20H100SB-TR datasheet(3/15 Pages) STMICROELECTRONICS

Part #	FERD20H100SB-TR

Description	100 V field-effect rectifier diode

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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3 / 15 page

FERD20H100S

Characteristics

DocID029022 Rev 2

3/15

1.1

Characteristics (curves)

Figure 1: Average forward current versus ambient

temperature (δ = 0.5)

Figure 2: Relative variation of thermal impedance

junction to case versus pulse duration

Figure 3: Relative variation of thermal impedance

junction to case versus pulse duration

Figure 4: Reverse leakage current versus reverse

voltage applied (typical values)

Figure 5: Junction capacitance versus reverse

voltage applied (typical values)

Figure 6: Forward voltage drop versus forward

current (typical values)

0

5

10

15

20

25

30

35

0

25

50

75

100

125

150

175

Tamb(°C)

IF(AV)(A)

Rth(j-a)=Rth(j-c)

T

= tp/T

tp

TO-220AB

/ DPAK / IPAK

TO-220FPAB

δ

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

tp(s)

Single pulse

TO-220AB

/ DPAK / IPAK

Zth(j-c)/Rth(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

tp(s)

Single pulse

TO-220FPAB

Zth(j-c)/Rth(j-c)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

0

10

20

30

40

50

60

70

80

90

100

VR(V)

Tj = 125 °C

Tj = 25 °C

Tj = 50 °C

Tj = 75 °C

Tj = 100 °C

Tj = 150 °C

IR(mA)

100

1000

10000

1

10

100

VR(V)

C(pF)

F = 1 MHz

Vosc = 30 mVRMS

Tj = 25 °C

0.1

1.0

10.0

100.0

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

VF(V)

Tj = 25 °C

Tj = 75 °C

Tj = 125 °C

IF(A)

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FERD20H100SB-TR Datasheet(PDF) 3 Page - STMicroelectronics

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