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HSDL3208 Datasheet(PDF) 3 Page - Agilent(Hewlett-Packard) |
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HSDL3208 Datasheet(HTML) 3 Page - Agilent(Hewlett-Packard) |
3 / 18 page 3 Absolute Maximum Ratings For implementations where case to ambient thermal resistance is ≤ _50°C/W. Parameter Symbol Min. Max. Units Notes Storage Temperature TS -40 +100 °C Operating Temperature TA -25 +85 °C LED Anode Voltage VLEDA 0 6.5 V Supply Voltage VCC 0 6.5 V Input Voltage: TXD, SD/Mode VI 0 6.5 V Output Voltage: RXD VO 0 6.5 V DC LED Transmit Current ILED (DC) 50 mA Peak LED Transmit Current ILED (PK) 250 mA 10 Note: 10. ≤ 20% duty cycle, ≤ 90 µs pulse width. Recommended Operating Conditions Parameter Symbol Min. Typ. Max. Units Conditions Operating Temperature TA -25 +85 °C Supply Voltage VCC 2.7 3.6 V Logic Input Voltage Logic High VIH 2/3 VCC VCC V Logic Low VIL 0 1/3 VCC V Receiver Input Logic High EIH 0.0081 500 mW/cm2 For in-band signals ≤ 115.2kbit/s[11] Logic Low EIL 1 µW/cm2 For in-band signals[11] LED (Logic High) Current ILEDA 50 mA Pulse Amplitude Receiver Data Rate 9.6 115.2 kbit/s Note: 11. An in-band optical signal is a pulse/sequence where the peak wavelength, λp, is defined as 850 ≤ λp ≤ 900 nm, and the pulse characteristics are compliant with the IrDA Serial Infrared Physical Layer Link Specification v1.4. CAUTIONS: The BiCMOS inherent to the design of this component increases the component’s susceptibility to damage from the electrostatic discharge (ESD). It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD. for TXD, SD/Mode Irradiance |
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