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STM32F439AI Datasheet(PDF) 105 Page - STMicroelectronics |
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STM32F439AI Datasheet(HTML) 105 Page - STMicroelectronics |
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105 / 240 page ![]() DocID024244 Rev 10 105/240 STM32F437xx and STM32F439xx Electrical characteristics 198 Table 28. Typical and maximum current consumptions in Standby mode Symbol Parameter Conditions Typ(1) Max(2) Unit TA = 25 °C TA = 25 °C TA = 85 °C TA = 105 °C VDD = 1.7 V VDD= 2.4 V VDD = 3.3 V VDD = 3.6 V IDD_STBY Supply current in Standby mode Backup SRAM ON, low-speed oscillator (LSE) and RTC ON 2.80 3.00 3.60 7.00 19.00 36.00 µA Backup SRAM OFF, low- speed oscillator (LSE) and RTC ON 2.30 2.60 3.10 6.00 16.00 31.00 Backup SRAM ON, RTC and LSE OFF 2.30 2.50 2.90 6.00(3) 18.00(3) 35.00(3) Backup SRAM OFF, RTC and LSE OFF 1.70 1.90 2.20 5.00(3) 15.00(3) 30.00(3) 1. The typical current consumption values are given with PDR OFF (internal reset OFF). When the PDR is OFF (internal reset OFF), the typical current consumption is reduced by additional 1.2 µA. 2. Based on characterization, not tested in production unless otherwise specified. 3. Based on characterization, tested in production. Table 29. Typical and maximum current consumptions in VBAT mode Symbol Parameter Conditions(1) Typ Max(2) Unit TA = 25 °C TA = 85 °C TA = 105 °C VBAT = 1.7 V VBAT= 2.4 V VBAT = 3.3 V VBAT = 3.6 V IDD_VBAT Backup domain supply current Backup SRAM ON, low-speed oscillator (LSE) and RTC ON 1.28 1.40 1.62 6 11 µA Backup SRAM OFF, low-speed oscillator (LSE) and RTC ON 0.66 0.76 0.97 3 5 Backup SRAM ON, RTC and LSE OFF 0.70 0.72 0.74 5 10 Backup SRAM OFF, RTC and LSE OFF 0.10 0.10 0.10 2 4 1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values. 2. Guaranteed by characterization results. |
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