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SPD08N50C3 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # SPD08N50C3
Description  Cool MOS??Power Transistor
Download  11 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPD08N50C3 Datasheet(HTML) 1 Page - Infineon Technologies AG

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200
8-04-11
Rev. 2.5
Page 1
SPD08N50C3
Cool MOS™ Power Transistor
VDS @ Tjmax
560
V
RDS(on)
0.6
Ω
ID
7.6
A
Feature
• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO-252
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
PG-TO252
Type
Package
Ordering Code
SPD08N50C3
PG-TO252
Q67040-S4569
Marking
08N50C3
Maximum Ratings, at TC = 25°C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
7.6
4.6
A
Pulsed drain current, t
p limited by Tjmax
ID puls
22.8
Avalanche energy, single pulse
ID=5.5A, VDD=50V
EAS
230
mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=7.6A, VDD=50V
EAR
0.5
Avalanche current, repetitive tAR limited by Tjmax
IAR
7.6
A
Gate source voltage
VGS
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
Power dissipation, TC = 25°C
Ptot
83
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C
Reverse diode dv/dt
dv/dt
15
V/ns
6
)
; available in Halogen free mold compounda)
2.6
2013-07-31
a) non-Halogen free (OPN: SPD08N50C3BT); Halogen free (OPN: SPD08N50C3AT)


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