SPD08N50C3 datasheet(7/11 Pages) INFINEON

Part #	SPD08N50C3

Description	Cool MOS??Power Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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7 / 11 page

200

8-04-11

Rev. 2.5

Page 7

SPD08N50C3

9 Typ. gate charge

VGS = f (QGate)

parameter: ID = 7.6 A pulsed

0

5

10

15

20

25

30

35

40 nC

50

QGate

0

2

4

6

8

10

12

V

16

SPD08N50C3

0.2 V

DS max

0.8 V

DS max

10 Forward characteristics of body diode

IF = f (VSD)

parameter: Tj , tp = 10 µs

0

0.4

0.8

1.2

1.6

2

2.4

V

3

VSD

-1

10

0

10

1

10

2

10

A

SPD08N50C3

T

j = 25 °C typ

T

j = 25 °C (98%)

T

j = 150 °C typ

T

j = 150 °C (98%)

11 Avalanche SOA

IAR = f (tAR)

par.: Tj ≤ 150 °C

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

4

µs

tAR

0

1

2

3

4

5

6

A

8

Tj(START)=125°C

Tj(START)=25°C

12 Avalanche energy

EAS = f (Tj)

par.: ID = 5.5 A, VDD = 50 V

20

40

60

80

100

120

°C

160

Tj

0

20

40

60

80

100

120

140

160

180

200

220

mJ

260

2013-07-31

2.6

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