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SPD08N50C3 Datasheet(PDF) 4 Page - Infineon Technologies AG |
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SPD08N50C3 Datasheet(HTML) 4 Page - Infineon Technologies AG |
4 / 11 page ![]() 200 8-04-11 Rev. 2.5 Page 4 SPD08N50C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC=25°C - - 7.6 A Inverse diode direct current, pulsed ISM - - 22.8 Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=400V, IF=IS , diF/dt=100A/µs - 370 - ns Reverse recovery charge Qrr - 3.6 - µC Peak reverse recovery current Irrm - 25 - A Peak rate of fall of reverse recovery current dirr/dt - 700 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Rth1 0.024 K/W Rth2 0.046 Rth3 0.085 Rth4 0.308 Rth5 0.317 Rth6 0.112 Thermal capacitance Cth1 0.00012 Ws/K Cth2 0.0004578 Cth3 0.000645 Cth4 0.001867 Cth5 0.004795 Cth6 0.045 External Heatsink Tj Tcase Tamb C th1 Cth2 Rth1 Rth,n Cth,n Ptot (t) 2013-07-31 2.6 |
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