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FGL60N100BNTD Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FGL60N100BNTD Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 7 page  FGL60N100BNTD Rev. A ©2004 Fairchild Semiconductor Corporation Electrical Characteristics of IGBT T C = 25°C unless otherwise noted Electrical Characteristics of DIODE T C = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1000 -- -- V ICES Collector Cut-Off Current VCE = 1000V, VGE = 0V -- -- 1.0 mA IGES G-E Leakage Current VGE = ± 25, VCE = 0V -- -- ± 500 nA On Characteristics VGE(th) G-E Threshold Voltage IC = 60mA, VCE = VGE 4.0 5.0 7.0 V VCE(sat) Collector to Emitter Saturation Voltage IC = 10A, VGE = 15V -- 1.5 1.8 V IC = 60A, VGE = 15V -- 2.5 2.9 V Dynamic Characteristics Cies Input Capacitance VCE=10V, VGE = 0V, f = 1MHz -- 6000 -- pF Coes Output Capacitance -- 260 -- pF Cres Reverse Transfer Capacitance -- 200 -- pF Switching Characteristics td(on) Turn-On Delay Time VCC = 600 V, IC = 60A, RG = 51Ω, VGE=15V, Resistive Load, TC = 25°C -- 140 -- ns tr Rise Time -- 320 -- ns td(off) Turn-Off Delay Time -- 630 -- ns tf Fall Time -- 130 250 ns Qg Total Gate Charge VCE = 600 V, IC = 60A, VGE = 15V , , TC = 25°C -- 275 350 nC Qge Gate-Emitter Charge -- 45 -- nC Qgc Gate-Collector Charge -- 95 -- nC Symbol Parameter Test Conditions Min. Typ. Max. Units VFM Diode Forward Voltage IF = 15A -- 1.2 1.7 V IF = 60A -- 1.8 2.1 V trr Diode Reverse Recovery Time IF = 60A di/dt = 20 A/us 1.2 1.5 us IR Instantaneous Reverse Current VRRM = 1000V -- 0.05 2 uA |
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