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BDxxFC0 series

Datasheet

Datasheet

TSZ02201-0G2G0A600040-1-2

© 2016 ROHM Co., Ltd. All rights reserved.

16.May.2016 Rev.004

www.rohm.com

TSZ22111・15・001

17. In some applications, the Vcc and the Vo potential might be reversed, possibly resulting in circuit internal damage or

damage to the elements. For example, the accumulated charge in the output pin capacitor flow backward from the Vo to

the Vcc when the Vcc shorts to the GND. Use a capacitor with a capacitance with less than 1000μF for reducing the

damage. We also recommend using reverse polarity diodes in series between the Vcc and the GND or a bypass diode

between the Vo and the Vcc.

18. Regarding input pins of the IC

This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.

PN junctions are formed at the intersection of these P layers with the N layers of other elements, creating parasitic diodes

and/or transistors. For example (refer to the Figure below):

○When GND > Pin A and GND > Pin B, the PN junction operates as a parasitic diode

○When GND > Pin B, the PN junction operates as a parasitic transistor

Parasitic diodes occur inevitably in the structure of the IC, and the operation of these parasitic diodes can result in mutual

interference among circuits, operational faults, or physical damage. Accordingly, conditions that cause these diodes to

operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be

avoided.

Example of monolithic IC structure