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BJ5FCWFP-E2 Datasheet(PDF) 32 Page - Rohm |
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BJ5FCWFP-E2 Datasheet(HTML) 32 Page - Rohm |
32 / 42 page 32/38 BDxxFC0 series Datasheet Datasheet TSZ02201-0G2G0A600040-1-2 © 2016 ROHM Co., Ltd. All rights reserved. 16.May.2016 Rev.004 www.rohm.com TSZ22111・15・001 Operation Note 11 Measurement circuit (BD00FC0W) 12. EN pin Do not make the voltage level of the chip’s enable pin at floating level or in between VEN(High) and VEN(Low). Otherwise, the output voltage would be unstable or indefinite. 13. For a steep change of the Vcc voltage Because MOSFET for output Transistor is used when an input voltage change is very steep, it may evoke large current. When selecting the value of external circuit constants, please make sure that the operation on the actual application takes these conditions into account. 14. For infinitesimal fluctuations of output voltage. For applications that have infinitesimal fluctuations of the output voltage caused by some factors (e.g. disturbance noise, input voltage fluctuations, load fluctuations, etc.), please take enough measures to avoid some influence (e.g. insert a filter, etc.). 15. Over current protection circuit (OCP) The IC incorporates an integrated over-current protection circuit that operates in accordance with the rated output capacity. This circuit serves to protect the IC from damage when the load becomes shorted. It is also designed to limit output current (without latching) in the event of a large and instantaneous current flow from a large capacitor or other component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents. However, the IC should not be used in applications characterized by the continuous or transitive operation of the protection circuits. 16. Thermal Shutdown circuit (TSD) The IC incorporates a built-in thermal shutdown circuit, which is designed to turn the IC off, completely, in the event of thermal overload. It is not designed to protect the IC from damage or guarantee its operation. IC’s should not be used after this function has activated, or in applications where the operation of this circuit is assumed. 0.001 0.01 0.1 1 10 100 0 200 400 600 800 1000 Io(mA) Unstable operating region Stable operating region 4.0V ≤ Vcc ≤ 26.5V 1.0V ≤ Vo < 3.0V (Cout and Ceramic capacitor 10µF is connected in parallel.) -25°C ≤ Ta ≤ +85°C 5kΩ ≤ R1 ≤ 10kΩ (BD00FC0W) 2.2µF ≤ Cin ≤ 100µF 1µF ≤ Cout ≤ 100µF 4.0V ≤ Vcc ≤ 26.5V 1.0V ≤ Vo < 3.0V (Cout and Ceramic capacitor 10µF is connected in parallel.) -25°C ≤ Ta ≤ +85°C 0A ≤ Io ≤ 1A 5kΩ≤ R1 ≤ 10kΩ (BD00FC0W) Cout_ESR vs Io 1.0V ≤ Vo < 3.0V Cout and Ceramic capacitor 10µF is connected in parallel. (Reference data) Cin vs Cout 1.0V ≤ Vo < 3.0V Cout and Ceramic capacitor 10µF is connected in parallel. (Reference data) Vcc EN GND FB Vo Cin (1µF or higher) VEN (5.0V) VCC (4.0V to 26.5V) R1 (5k to 10kΩ) R2 Output load Io(Rout) Cout (1µF or higher) ESR (0.001Ω or higher) 10µF 1 10 100 110 100 Cout(µF) Stable operating region 2.2 Unstable operating region |
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