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PS30U100CT Datasheet(PDF) 1 Page - Chongqing Pingwei Enterprise co.,Ltd |
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PS30U100CT Datasheet(HTML) 1 Page - Chongqing Pingwei Enterprise co.,Ltd |
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1 / 1 page ![]() - 页码 - Rev. 14-1 http:// www.perfectway.cn PS30U45(F,B,H)CT thru PS30U120(F,B,H)CT 30A Schottky Barrier Rectifier FEATURE High current capability Ultra low forward voltage drop Low power loss, high efficiency High surge capability High ESD capability High temperature soldering guaranteed: 260°C/10s/0.25"(6.35mm) from case MECHANICAL DATA Case: Molded with UL-94 Class V-0 recognized Flame Retardant Epoxy Mounting position: any TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters and polarity protection application. TO-220AB ITO-220AB PS30UXXCT PS30UXXFCT TO-263 TO-262 PS30UXXBCT PS30UXXHCT Ratings at 25°C ambient temperature unless otherwise specified, Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS Parameter Symbol PS30U45 CT PS30U60 CT PS30U100 CT PS30U120 CT units Maximum Recurrent Peak Reverse Voltage VRRM 45 60 100 120 V Maximum RMS Voltage VRMS 32 42 70 84 V Maximum DC Blocking Voltage VDC 45 60 100 120 V Maximum Average Forward Rectified Current at TC=90°C total device IF(AV) 30.0 A per diode 15.0 Peak Forward Surge Current 8.3ms Single Half sine-wave superimposed on rate load per diode (JEDEC method) IFSM 175 A Junction Capacitance (Note1) CJ 780 500 pF Storage Temperature Range TSTG -55 to +150 °C Operation Temperature Range TJ -55 to +150 °C ELECTRONICAL CHARACTERISTICS Parameter Symbol PS30U45 CT PS30U60 CT PS30U100 CT PS30U120 CT units Maximum Forward Voltage Drop per diode at 15A (Note 2) VF 0.55 0.60 0.78 0.85 V Maximum DC Reverse Current at rated DC blocking voltage (Note 2) @ TC =25°C IR 0.25 0.1 mA @ TC=100°C 50.0 30.0 THERMAL CHARACTERISTICS Parameter Symbol ITO-220 TO-220 TO-262 TO-263 units Typical Thermal Resistance (Note 3) Rth (JC) 3.0 2.0 2.0 °C/W Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc. 2. Pulse test: 300 μs pulse width, 1% duty cycle. 3. Thermal Resistance from Junction to Case Mounted on heatsink. |
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