MTC3588N6_16 datasheet(2/12 Pages) CYSTEKEC

Part #	MTC3588N6

Description	N- And P-Channel Enhancement Mode Power MOSFET

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Manufacturer	CYSTEKEC [Cystech Electonics Corp.]

Direct Link	http://www.cystekec.com

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CYStech Electronics Corp.

Spec. No. : C102N6

Issued Date : 2015.08.13

Revised Date : 2016.10.11

Page No. : 2/12

MTC3588N6

CYStek Product Specification

Absolute Maximum Ratings (Ta=25C)

Parameter

Symbol

Limits

Unit

N-channel

P-channel

Drain-Source Breakdown Voltage

BVDSS

14

-14

V

Gate-Source Voltage

VGS

±8

Continuous Drain Current @TA=25 C (Note 1)

ID

5.4

-3.6

A

Continuous Drain Current @TA=70 C (Note 1)

4.3

-2.9

Pulsed Drain Current (Note 2)

IDM

20

-20

Total Power Dissipation (Note 1)

Linear Derating Factor

PD

1.14

W

0.01

W / C

Operating Junction and Storage Temperature

Tj, Tstg

-55~+150

C

Note : 1.Surface mounted on 1 in²copper pad of FR-4 board, t≤5 sec.

2.

Pulse width limited by maximum junction temperature.

N-Channel Electrical Characteristics (Tj=25C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

14

-

V

VGS=0V, ID=250μA

∆BVDSS/∆Tj

-

8

-

mV/C

Reference to 25C, ID=1mA

VGS(th)

0.4

-

1.0

V

VDS=VGS, ID=250μA

IGSS

-

±100

nA

VGS=±8V, VDS=0V

IDSS

-

1

μA

VDS=12V, VGS=0V

-

10

VDS=10V, VGS=0V, Tj=70C

*RDS(ON)

-

17.6

25

m

ID=5A, VGS=4.5V

-

24.7

33

ID=4.6A, VGS=2.5V

*GFS

-

5.6

-

S

VDS=5V, ID=3A

Dynamic

Ciss

-

407

-

pF

VDS=10V, VGS=0V, f=1MHz

Coss

-

115

-

Crss

-

100

-

*td(ON)

-

5

-

ns

VDS=10V, ID=1A, VGS=5V, RG=3.3Ω

*tr

-

18.8

-

*td(OFF)

-

49.6

-

*tf

-

30.8

-

*Qg

-

6.5

-

nC

VDS=10V, ID=3A, VGS=4.5V

*Qgs

-

0.7

-

*Qgd

-

2.3

-

Rg

-

1

-

Ω

f=1MHz

Source-Drain Diode

*VSD

-

0.87

1.2

V

VGS=0V, IS=5.2A

*trr

-

12

-

ns

IF=3A, VGS=0V, dIF/dt=100A/μs

*Qrr

-

2.3

-

nC

*Pulse Test : Pulse Width 300μs, Duty Cycle2%

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