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MTC3588N6 Datasheet(PDF) 9 Page - Cystech Electonics Corp. |
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MTC3588N6 Datasheet(HTML) 9 Page - Cystech Electonics Corp. |
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9 / 12 page  CYStech Electronics Corp. Spec. No. : C102N6 Issued Date : 2015.08.13 Revised Date : 2016.10.11 Page No. : 9/12 MTC3588N6 CYStek Product Specification P-channel Typical Characteristics(Cont.) Typical Transfer Characteristics 0 4 8 12 16 20 0 1 2 3 4 5 VGS, Gate-Source Voltage(V) VDS=5V Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -ID, Drain Current(A) Pulsed Ta=25°C VDS=-10V VDS=-5V Transient Thermal Response Curves 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, Square Wave Pulse Duration(s) Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=110°C/W Recommended Soldering Footprint |
Similar Part No. - MTC3588N6_16 |
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Similar Description - MTC3588N6_16 |
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