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MTC3588N6 Datasheet(PDF) 7 Page - Cystech Electonics Corp.

Part # MTC3588N6
Description  N- And P-Channel Enhancement Mode Power MOSFET
Download  12 Pages
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Manufacturer  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTC3588N6 Datasheet(HTML) 7 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C102N6
Issued Date : 2015.08.13
Revised Date : 2016.10.11
Page No. : 7/12
MTC3588N6
CYStek Product Specification
P-channel Typical Characteristics
Typical Output Characteristics
0
4
8
12
16
20
0
1
2
3
4
5
-VDS, Drain-Source Voltage(V)
-VGS=2.5V
-VGS=2V
-VGS=3V
5V, 4V
-
Brekdown Voltage vs Ambient Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
ID=-250
μA,
VGS=0V
Static Drain-Source On-State resistance vs Drain Current
10
100
1000
0.01
0.1
1
10
-ID, Drain Current(A)
VGS=-1.8V
VGS=-1.5V
VGS=-2.5V
VGS=-4.5V
Reverse Drain Current vs Source-Drain Voltage
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
-IDR, Reverse Drain Current (A)
Tj=25°C
Tj=150°C
VGS=0V
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
0
50
100
150
200
250
300
0
1
2
3
4
5
6
7
8
-VGS, Gate-Source Voltage(V)
ID=-3.6A
Drain-Source On-State Resistance vs Junction Tempearture
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
VGS=-4.5V, ID=-3.6A
RDS(ON)@Tj=25°C : 45.1mΩ typ.


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