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MTC3588N6 Datasheet(PDF) 5 Page - Cystech Electonics Corp.

Part # MTC3588N6
Description  N- And P-Channel Enhancement Mode Power MOSFET
Download  12 Pages
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Manufacturer  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTC3588N6 Datasheet(HTML) 5 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C102N6
Issued Date : 2015.08.13
Revised Date : 2016.10.11
Page No. : 5/12
MTC3588N6
CYStek Product Specification
N-channel Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10
100
1000
0.1
1
10
VDS, Drain-Source Voltage(V)
Coss
Ciss
Crss
Threshold Voltage vs Junction Tempearture
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
ID=250
μA
Single Pulse Power Rating, Junction to Ambient
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
Pulse Width(s)
TJ(MAX)=150°C
TA=25°C
RθJA=110°C/W
Gate Charge Characteristics
0
2
4
6
8
10
0
2
4
6
8
10
12
14
Qg, Total Gate Charge(nC)
ID=3A
VDS=10V
Maximum Safe Operating Area
0.01
0.1
1
10
100
0.01
0.1
1
10
100
VDS, Drain-Source Voltage(V)
DC
10ms
100ms
1ms
100
μs
TA=25°C, Tj=150°C,
VGS=4.5V, RθJA=110°C/W
Single Pulse
RDS(ON)
Limited
Maximum Drain Current vs JunctionTemperature
0.0
1.0
2.0
3.0
4.0
5.0
6.0
25
50
75
100
125
150
175
Tj, Junction Temperature(°C)
TA=25°C, VGS=4.5V, RθJA=110°C/W


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