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MTC3588N6 Datasheet(PDF) 4 Page - Cystech Electonics Corp.

Part # MTC3588N6
Description  N- And P-Channel Enhancement Mode Power MOSFET
Download  12 Pages
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Manufacturer  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTC3588N6 Datasheet(HTML) 4 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C102N6
Issued Date : 2015.08.13
Revised Date : 2016.10.11
Page No. : 4/12
MTC3588N6
CYStek Product Specification
N-channel Typical Characteristics
Typical Output Characteristics
0
4
8
12
16
20
0
1
2
3
4
5
VDS, Drain-Source Voltage(V)
VGS=1.5V
VGS=2V
5V, 4V, 3.5V, 3V, 2.5V
Brekdown Voltage vs Ambient Temperature
0.4
0.6
0.8
1.0
1.2
1.4
-75
-50
-25
0
25
50
75
100 125 150 175
Tj, Junction Temperature(°C)
ID=250
μA,
VGS=0V
Static Drain-Source On-State resistance vs Drain Current
1
10
100
1000
0.01
0.1
1
10
100
ID, Drain Current(A)
VGS=1.8V
VGS=1.5V
VGS=4.5V
VGS=2.5V
Reverse Drain Current vs Source-Drain Voltage
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
IDR, Reverse Drain Current(A)
Tj=25°C
Tj=150°C
VGS=0V
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
0
20
40
60
80
100
120
140
160
180
200
0
1
2
3
4
5
6
7
8
VGS, Gate-Source Voltage(V)
ID=5A
Drain-Source On-State Resistance vs Junction Tempearture
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
VGS=4.5V, ID=5A
RDS(ON)@Tj=25°C : 17.6mΩ typ.


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